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Silicon Bidirectional DB3 DIAC Trigger Diode With High Forward Surge Capability

China Wuxi Xuyang Electronics Co., Ltd. certification
China Wuxi Xuyang Electronics Co., Ltd. certification
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Silicon Bidirectional DB3 DIAC Trigger Diode With High Forward Surge Capability

Silicon Bidirectional DB3 DIAC Trigger Diode With High Forward Surge Capability
Silicon Bidirectional DB3 DIAC Trigger Diode With High Forward Surge Capability Silicon Bidirectional DB3 DIAC Trigger Diode With High Forward Surge Capability Silicon Bidirectional DB3 DIAC Trigger Diode With High Forward Surge Capability

Large Image :  Silicon Bidirectional DB3 DIAC Trigger Diode With High Forward Surge Capability

Product Details:

Place of Origin: China
Brand Name: XUYANG
Certification: ISO9001
Model Number: DB3

Payment & Shipping Terms:

Minimum Order Quantity: 5000pcs
Price: negotiation
Packaging Details: tape in reel, 5000pcs/reel
Delivery Time: 5 - 8 work days
Payment Terms: T/T, Western Union
Supply Ability: 100000pcs per 1 week
Detailed Product Description
Part Number: DB3 VBO: 28-36V
Package: SMA/DO-214AC Junction Temperature: -40~+110°C
Packing: Tape In Reel Shipping By: DHL\UPS\Fedex\EMS\sea
High Light:

db3 diac diode

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db3 diac trigger diode

Silicon Bidirectional DIAC Trigger Diode DB3 SMA With Surface Mount Package

 

Features

1. Low reverse leakage

2. High forward surge capability

3. High temperature soldering guaranteed: 250℃/10 seconds, 0.375" (9.5mm) lead length

 

 

Mechanical Data

·Terminals: Plated axial leads
·Polarity: Color band denotes cathode end
·Mounting Position: Any

 

 

Absolute Maximum Ratings

Symbols Parameter Value Unit
DB3
Pc

Power Dissipation on Printed

Circuit [ L=10mm ]

TA=50℃ 150 mW
ITRM

Repetitive Peak on-state

Current

tp=10us

F=100Hz

2.0 A
TSTG/TJ Storage and 0 perating Junction Temperature -40 to +125 / -40 to 110

 

Electrical Characteristics

Parameter Symbol Test Conditions Value Unit
Breakover voltage VBO   MIN. 28 V
TYP. 32
MAX. 36
Breakover voltage symmetry |VBO1-VBO2| C=22nF** MAX. ±3 V
Dynamic breakover voltage* △V VBO and VF at 10mA MIN. 5 V
Output voltage* VO see diagram 2(R=20Ω) MIN. 5 V
Breakover current* IBO C=22nF** MAX. 100 μA
Rise time* tr   MAX. 1.5 μs
Leakage current* IR VR=0.5VBO max MAX. 10 μA

Notes:1.Electrical characteristics applicable in both forward and reverse directions.
           2.Connected in parallel with the devices.

 

Size:

Silicon Bidirectional DB3 DIAC Trigger Diode With High Forward Surge Capability 0Silicon Bidirectional DB3 DIAC Trigger Diode With High Forward Surge Capability 1

 

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What can you from XUYANG?

Best service: with 10 years experience in exporting sales staff will service you.

High quality: help you to avoid purchasing risk.

Short delivery: help you to save time.

Competitive price: the price is not the lowest but the highest cost performance

OEM/ODM: we are confident we can meet you OEM/ODm requirements.

Contact Details
Wuxi Xuyang Electronics Co., Ltd.

Contact Person: Bixia Wu

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