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0.15A 75V 4.0nS High Speed Switching Diode 1N4148 With DO-35 Glass Case

China Wuxi Xuyang Electronics Co., Ltd. certification
China Wuxi Xuyang Electronics Co., Ltd. certification
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0.15A 75V 4.0nS High Speed Switching Diode 1N4148 With DO-35 Glass Case

0.15A 75V 4.0nS High Speed Switching Diode 1N4148 With DO-35 Glass Case
0.15A 75V 4.0nS High Speed Switching Diode 1N4148 With DO-35 Glass Case 0.15A 75V 4.0nS High Speed Switching Diode 1N4148 With DO-35 Glass Case 0.15A 75V 4.0nS High Speed Switching Diode 1N4148 With DO-35 Glass Case 0.15A 75V 4.0nS High Speed Switching Diode 1N4148 With DO-35 Glass Case 0.15A 75V 4.0nS High Speed Switching Diode 1N4148 With DO-35 Glass Case 0.15A 75V 4.0nS High Speed Switching Diode 1N4148 With DO-35 Glass Case

Large Image :  0.15A 75V 4.0nS High Speed Switching Diode 1N4148 With DO-35 Glass Case

Product Details:

Place of Origin: China
Brand Name: XUYANG
Certification: ISO9001
Model Number: 1N4148

Payment & Shipping Terms:

Minimum Order Quantity: 5000pcs
Price: negotiation
Packaging Details: tape in box, 5000pcs/box
Delivery Time: 5 - 8 work days
Payment Terms: T/T, Western Union
Supply Ability: 100000pcs per 1 week
Detailed Product Description
Name: Switching Diode Part Number: 1N4148
VR: 75V Package: DO-35
Lead Free Status: Lead Free/RoHS Shipping By: DHL\UPS\Fedex\EMS\sea
High Light:

ultra fast switching diode

,

small signal switching diode

0.15A 75V 4.0nS DO-35 Package High Speed Switching Diode 1N4148

 

 

Features

 

• Silicon Epitaxial Planar Diode

• Fast switching diode.

• This diode is also available in other case styles including the SOD-123 case with the type

designation 1N4148W, the MiniMELF case with the type designation LL4148, the SOT-23

case with the type designation IMBD4148.

.

Mechanical Data

Case: DO-35 Glass Case

Weight: approx. 0.13g

 

Drawing:

0.15A 75V 4.0nS High Speed Switching Diode 1N4148 With DO-35 Glass Case 0

 

Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)

Parameter Symbol Limit Unit
Reverse Voltage VR 75 V
Peak Reverse Voltage VRM 100 V

Average Rectified Current

Half Wave Rectification with Resistive Load at Tamb = 25°C

IF(AV) 150 mA
Surge Forward Current at t < 1s and Tj = 25°C IFSM 500 mA
Power Dissipation at Tamb = 25°C Ptot 500 mW
Thermal Resistance Junction to Ambient Air RθJA 350 °C/W
Junction Temperature Tj 175 °C
Storage Temperature TS –65 to +175 °C

 

Electrical Characteristics (TJ = 25°C unless otherwise noted)

Parameter Symbol Test Condition Min Typ Max Unit
Reverse Breakdown Voltage V(BR)R IR = 100μA 100     V
Forward Voltage VF IF = 10mA 1.0 V
Leakage Current IR

VR = 20V

VR = 75V

VR = 20V, TJ = 150°C

25

5

50

nA

μA

μA

Capacitance Ctot VF = VR = 0V 4 pF

Voltage Rise when Switching ON

(tested with 50mA Pulses)

Vfr

tp = 0.1μs, Rise time < 30ns

fp = 5 to 100kHz

2.5 ns
Reverse Recovery Time trr

IF = 10mA, IR = 1mA,

VR = 6V , RL = 100Ω

4 ns
Rectification Efficiency nv f = 100MHz, VRF = 2V 0.45

Contact Details
Wuxi Xuyang Electronics Co., Ltd.

Contact Person: Bixia Wu

Fax: 86-510-87896778

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