Product Details:
Payment & Shipping Terms:
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| Part Number: | DF005S-DF10S | Current: | 1A |
|---|---|---|---|
| Voltage: | 50-1000V | Mounting Type: | Surface Mount |
| Shipping By: | DHL\UPS\Fedex\EMS\sea | SPQ: | 1000pcs |
| Operating Temperature: | -55°C To +150°C | Storage Temperature: | -55°C To +150°C |
| High Light: | bridge type rectifier,passivated bridge rectifier |
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1.0 Amp Voltage 50 to 1000 Volts Diode Bridge Rectifier DF01S DF02S DF04S DF06S DF08S DF10S
FEATURES
♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0
♦ This series is UL recognized under Component Index, file number E54214
♦ Glass passivated chip junctions
♦ High surge overload rating-50 amperes peak
♦ Ideal for printed circuit boards
♦ High temperature soldering guaranteed: 260°C/10 seconds at 5 lbs. (2.3kg) tension
MECHANICAL DATA
Case: Molded plastic body over passivated junctions
Terminals: Plated leads solderable per MIL-STD-750, Method 2026
Polarity: Polarity symbols marked on body Mounting
Position: Any
Weight: 0.04 ounce, 1.0 gram
Typical Applications:
General purpose use in ac-to-dc bridge full wave rectification for SMPS, lighting ballaster, adapter,
battery charger, home applicances, office equipment and telecommunication applications.
Maximum Ratings & Thermal Characteristics
Rating at 25 C ambient temperature unless otherwise specified, Resistive or Inductive oad, 60 Hz.
For Capacitive load derate current by 20%.
| Parameter | Symbol | DF005S | DF01S | DF02S | DF04S | DF06S | DF08S | DF10S | UNITS |
| Maximum repetitive peak reverse voltage | VRRM | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
| Maximum RMS bridge input Voltage | VRMS | 35 | 70 | 140 | 280 | 420 | 560 | 700 | V |
| Maximum DC Blocking Voltage | VDC | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
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Maximum instantaneous forward voltage drop per leg at 1.0A |
VF | 1.1 | V | ||||||
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Maximum DC reverse current at rated TA =25 C DC blocking voltage per element TA =125 C |
IR |
10 500 |
μA | ||||||
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Maximum average forward rectified output current at TA=40 C |
IF(AV) | 1.0 | A | ||||||
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Peak Forward Surge Current, 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) |
IFSM | 50 | A | ||||||
| Rating for fusing ( t<8.3ms) | I 2 t | 10 | A2sec | ||||||
| Typical thermal resistance per element (1) | ReJA | 110 | ℃/W | ||||||
| Typical junction capacitance per element (2) | Cj | 25 | pF | ||||||
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Operating junction and storage temperature range |
TJ, TSTG |
-55--150 | ℃ | ||||||
Notes: (1)Thermal resistance from Junction to Ambemt on P.C.board mounting.
(2)Measured at 2.0MHz and applied reverse voltage of 4.0 volts.
Size:
Why choose us?
1. ISO9001:2008 certified factory
2. 20 years rich experience in the diode production
3. Strict quality control, achieve customer's maximum satisfaction
4. The Annual production capacity is over 2 billion
Contact Person: Bixia Wu
