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Home ProductsUltra Fast Recovery Rectifier Diode

1Amp Ultra Fast Recovery Rectifier Diode Glass Passivated 50-1000V RGP10A-M DO-41

China Wuxi Xuyang Electronics Co., Ltd. certification
China Wuxi Xuyang Electronics Co., Ltd. certification
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1Amp Ultra Fast Recovery Rectifier Diode Glass Passivated 50-1000V RGP10A-M DO-41

1Amp Ultra Fast Recovery Rectifier Diode Glass Passivated 50-1000V RGP10A-M DO-41
1Amp Ultra Fast Recovery Rectifier Diode Glass Passivated 50-1000V RGP10A-M DO-41 1Amp Ultra Fast Recovery Rectifier Diode Glass Passivated 50-1000V RGP10A-M DO-41 1Amp Ultra Fast Recovery Rectifier Diode Glass Passivated 50-1000V RGP10A-M DO-41

Large Image :  1Amp Ultra Fast Recovery Rectifier Diode Glass Passivated 50-1000V RGP10A-M DO-41

Product Details:

Place of Origin: China
Brand Name: XUYANG
Certification: ISO9001
Model Number: RGP10A-M

Payment & Shipping Terms:

Minimum Order Quantity: 5000pcs
Price: negotiation
Packaging Details: tape in box, 5000pcs/box
Delivery Time: 5 - 8 work days
Payment Terms: T/T, Western Union, Paypal
Supply Ability: 3500000pcs/month
Detailed Product Description
Part Number: RGP10A-M Current: 1A
Voltage: 50-1000V Package: DO-41
SPQ: 5000pcs RoHS: Yes
High Light:

ultrafast bridge rectifier

,

fast recovery bridge rectifier

1Amp Super Fast Recovery Silicon Rectifier Glass Passivated 50-1000V RGP10A-M DO-41

 

FEATURES

 

● Glass passivated chip junctions
● Ideal for automated placement
● Ultrafast reverse recovery time
for high efficiency
● Low profile package
● High forward surge capability
● High temperature soldering:
260℃/10 seconds at terminals
● Component in accordance to
RoHS 2002/95/1 and WEEE 2002/96/EC

 

Mechanical Date

 

Symbol Parameter Value Units
10A 10B 10D 10G 10J 10K 10M
V RRM Maximum Repetitive Reverse Voltage 50 100 200 400 600 800 1000 V
I F(AV)

Average Rectified Forward Current,

.375 " lead length @ T L = 55°C

1.0 A
I FSM

Non-repetitive Peak Forward Surge Current

8.3 ms Single Half-Sine-Wave

30 A
T stg Storage Temperature Range -65 to +175 °C
T J Operating Junction Temperature -65 to +175 °C

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired

 

Thermal Characteristics

 

Symboy Paramete Value Units
P D Power Dissipation 3.0 W
R θJA Thermal Resistance, Junction to Ambient 50 °C/W

 

Electrical Characteristics T A = 25°C unless otherwise noted

 

 

Symbol Parameter Value Units
10A 10B 10D 10G 10J 10K 10M
VF Forward Voltage @ 1.0 A 1.3 V
t rr

Reverse Recovery Time

I F = 0.5 A, I R = 1.0 A, I rr = 0.25 A

150 250 500 A
I R

Reverse Current @ rated V R T A = 25°C

T A = 150°C

5.0

200

uA

uA

C T

Total Capacitance

V R = 4.0 V, f = 1.0 MHz

15 pF

 

 

Size

 

1Amp Ultra Fast Recovery Rectifier Diode Glass Passivated 50-1000V RGP10A-M DO-41 0

1Amp Ultra Fast Recovery Rectifier Diode Glass Passivated 50-1000V RGP10A-M DO-41 1

 

What can you from XUYANG?

Best service: with 10 years experience in exporting sales staff will service you.

High quality: help you to avoid purchasing risk.

Short delivery: help you to save time.

Competitive price: the price is not the lowest but the highest cost performance

OEM/ODM: we are confident we can meet you OEM/ODm requirements.

Contact Details
Wuxi Xuyang Electronics Co., Ltd.

Contact Person: Bixia Wu

Fax: 86-510-87896778

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