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50ns Recovery Ultra Fast Switching Diode BAV19 BAV20 BAV21 ROHS Compliant

China Wuxi Xuyang Electronics Co., Ltd. certification
China Wuxi Xuyang Electronics Co., Ltd. certification
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50ns Recovery Ultra Fast Switching Diode BAV19 BAV20 BAV21 ROHS Compliant

50ns Recovery Ultra Fast Switching Diode BAV19 BAV20 BAV21 ROHS Compliant
50ns Recovery Ultra Fast Switching Diode BAV19 BAV20 BAV21 ROHS Compliant 50ns Recovery Ultra Fast Switching Diode BAV19 BAV20 BAV21 ROHS Compliant 50ns Recovery Ultra Fast Switching Diode BAV19 BAV20 BAV21 ROHS Compliant

Large Image :  50ns Recovery Ultra Fast Switching Diode BAV19 BAV20 BAV21 ROHS Compliant

Product Details:

Place of Origin: China
Brand Name: XUYANG
Certification: ISO9001/RoHS
Model Number: BAV21

Payment & Shipping Terms:

Minimum Order Quantity: 5000pcs
Price: negotiation
Packaging Details: tape in box, 5000pcs/box
Delivery Time: 5 - 8 work days
Payment Terms: T/T, Western Union
Supply Ability: 100000pcs per 1 week
Detailed Product Description
Name: Small Signal Diode Part Number: BAV21
VR: 200V Package: DO-35
Recovery Time: 50ns Shipping By: DHL\UPS\Fedex\EMS\sea
High Light:

small signal fast switching diodes

,

small signal switching diode

BAV19 BAV20 BAV21 High Speed Switching Diode Small Signal Diode

 

 

Features

 

• DO-35 Package (JEDEC)

• Through-Hole Device Type Mounting

• Hermetically Sealed Glass

• Compression Bonded Construction

• All external surfaces are corrosion resistant and leads are readily solderable

• ROHS Compliant

• Solder hot dip Tin(Sn) lead finish

• Cathode indicated by polarity band

• Band Indicates Cathode

 

 

Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)

Parameter Symbol Limit Unit

Continuous Reverse Voltage BAV19

BAV20

BAV21

VR

100

150

200

V

Repetitive Peak Reverse Voltage BAV19

BAV20

BAV21

VRRM

120

200

250

V
Forward DC Current at Tamb = 25°C(1) IF 250 mA

Rectified Current (Average)

Half Wave Rectification with Resistive Load at Tamb = 25°C

IF(AV) 200 mA
Repetitive Peak Forward Current at f ≥ 50Hz, È = 180°, Tamb = 25°C(1) IFRM 625 mA
Surge Forward Current at t < 1s and Tj = 25°C IFSM 1 A
Power Dissipation at Tamb = 25°C(1) Ptot 500 mW
Thermal Resistance Junction to Ambient Air(1) RèJA 430 °C/W
Junction Temperature(1) Tj 175 °C
Storage Temperature Range(1) TS –65 to +175 °C

 

Electrical Characteristics (TJ = 25°C unless otherwise noted)

Parameter Symbol Test Condition Min Typ Max Unit
Forward Voltage VF

IF = 5mA

IF = 100mA

1.00

1.25

V

Leakage Current BAV19

BAV19

BAV20

BAV20

BAV21

BAV21

IR

VR = 100V

VR = 100V, Tj = 100°C

VR = 150V

VR = 150V, TJ = 100°C

VR = 200V

VR = 200V, TJ = 100°C

100

15

100

15

100

15

nA

μA

nA

μA

nA

μA

Dynamic Forward Resistance rf IF = 10mA 5 V
Capacitance Ctot VR = 0, f = 1MHz 1.5 pF
Reverse Recovery Time trr

IF = 30mA, IR = 30mA,

Irr = 3mA, RL = 100Ω

50 ns

 

Drawing:

50ns Recovery Ultra Fast Switching Diode BAV19 BAV20 BAV21 ROHS Compliant 0

Advantage:

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Contact Details
Wuxi Xuyang Electronics Co., Ltd.

Contact Person: Bixia Wu

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