Product Details:
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| Name: | High Voltage Switching Diode | Part Number: | 1SS83 |
|---|---|---|---|
| VR: | 250V | Case: | DO-35 |
| Junction Temperature: | 175°C | Storage Temperature: | –65 To +175°C |
| High Light: | small signal fast switching diodes,small signal switching diode |
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Silicon Epitaxial Planar For High Voltage Switching Diode 1SS83
Features
• High Reverse Voltage(VR = 250V)
• High reliability with glass seal
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Mechanical Data
Case: DO-35 Glass Case
Weight: approx. 0.13g
Absolute Maximum Ratings
| Parameter | Symbol | Limit | Unit |
| Reverse Voltage | VR | 250 | V |
| Peak Reverse Voltage*1 | VRM | 300 | V |
| Average rectified current | Io | 200 | mA |
| Peak forward current | IFM | 625 | mA |
| Non-Repetitive peak forward surge current | IFSM *2 | 1 | A |
| Power Dissipation | Pd | 400 | mW |
| Junction Temperature | Tj | 175 | °C |
| Storage Temperature | TS | –65 to +175 | °C |
Electrical Characteristics (TJ = 25°C unless otherwise noted)
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Forward Voltage | VF | IF = 100mA | — | — | 1.0 | V |
| Reverse Current | IR1 | VR = 200V | — | — | 200 | nA |
| IR2 | VR = 300V | — | — | 100 | μA | |
| Capacitance | C | VR = 0V, f =1.0 MHz | — | 1.5 | — | pF |
| Reverse Recovery Time | trr |
IF = IR = 30mA, Irr = 3 mA , RL = 100Ω |
— | — | 100 | ns |
Drawing:
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