Product Details:
Payment & Shipping Terms:
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| Name: | High Speed Switching Diode | Part Number: | 1SS133 |
|---|---|---|---|
| VR: | 80V | Package: | DO-34 |
| Reverse Recovery Time: | 4ns | Shipping By: | DHL\UPS\Fedex\EMS\sea |
| High Light: | ultra fast switching diode,small signal switching diode |
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1SS133 1SS244 High Speed Switching DiodeLow Reverse Current DO-34
Features
1. Glass sealed envelope.
2. High reliability.
3. High speed.
Applications
High speed switching
Construction
Silicon epitaxial planar
Absolute Maximum Ratings
Tj=25℃
| Parameter | Symbol | Limit | Unit |
| DC Reverse Voltage | VR | 80 | V |
| Peak Reverse Voltage*1 | VRM | 90 | V |
| Mean rectifying current | Io | 130 | mA |
| Peak forward current | IFM | 400 | mA |
| Surge current(1s) | Isurge | 600 | mA |
| Power Dissipation | P | 300 | mW |
| Junction Temperature | Tj | 175 | °C |
| Storage Temperature | TS | –65 to +175 | °C |
Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress
ratings only. Functional operation above the recommended operating conditions is not implied.
Extended exposure to stresses above the recommended operating conditions may affect device
reliability.
Electrical Characteristics
Tj=25℃
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Forward Voltage | VF | IF = 100mA | — | 0.92 | 1.0 | V |
| Reverse Current | IR | VR = 80V | — | 0.02 | 0.5 | μA |
| Capacitance between terminals | CT | VR = 0.5V, f =1.0 MHz | — | 1.55 | 2 | pF |
| Reverse Recovery Time | trr | VR = 0.5V , IF = 10mA, RL = 50Ω | — | 1.5 | 4 | ns |
What can you from XUYANG?
Best service: with 10 years experience in exporting sales staff will service you.
High quality: help you to avoid purchasing risk.
Short delivery: help you to save time.
Competitive price: the price is not the lowest but the highest cost performance
OEM/ODM: we are confident we can meet you OEM/ODm requirements.
Contact Person: Bixia Wu
